Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures

被引：8

作者：

Kondratenko, Serhiy V. ^{[1
]}

Iliash, Sviatoslav A. ^{[1
]}

Vakulenko, Oleg V. ^{[1
]}

Mazur, Yuriy I. ^{[2
]}

Benamara, Mourad ^{[2
]}

Marega, Euclydes, Jr. ^{[2
,3
]}

Salamo, Gregory J. ^{[2
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Dept Phys, 64 Volodymyrska St, UA-01601 Kiev, Ukraine

[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

[3] Univ Sao Paulo, Inst Fis Sao Carlos, CP 369, BR-13560970 Sao Carlos, SP, Brazil

来源：

NANOSCALE RESEARCH LETTERS | 2017年 / 12卷

基金：

美国国家科学基金会;

关键词：

Quantum dot chain; InAs/InGaAs; Nanostructure; Semiconductor; Photoluminescence; Photoconductivity recombination; Quantum-size state; GAAS; EL2; ANTISITE; DEFECTS;

D O I：

10.1186/s11671-017-1954-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An experimental study of the photoconductivity time decay in InGaAs/GaAs quantum dot chain structures is reported. Different photoconductivity relaxations resulting from spectrally selecting photoexcitation of InGaAs QWR or QDs as well as GaAs spacers were measured. The photoconductivity relaxation after excitation of 650 nm follows a stretched exponent with decay constant dependent on morphology of InGaAs epitaxial layers. Kinetics with 980 nm excitation are successfully described by equation that takes into account the linear recombination involving Shockley-Read centers in the GaAs spacers and bimolecular recombination via quantum-size states of InGaAs QWRs or QDs.

引用

页数：7

共 50 条

[1] Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
Serhiy V. Kondratenko
Sviatoslav A. Iliash
Oleg V. Vakulenko
Yuriy I. Mazur
Mourad Benamara
Euclydes Marega
Gregory J. Salamo
Nanoscale Research Letters, 2017, 12
[2] Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures
Golovynskyi, S. L.
Dacenko, O. I.
Kondratenko, S. V.
Lavoryk, S. R.
Mazur, Yu. I.
Wang, Zh. M.
Ware, M. E.
Tarasov, G. G.
Salamo, G. J.
JOURNAL OF APPLIED PHYSICS, 2016, 119 (18)
[3] Effect of carrier capture by deep levels on lateral photoconductivity of InGaAs/GaAs quantum dot structures
Vakulenko, O. V.
Golovynskyi, S. L.
Kondratenko, S. V.
JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)
[4] Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
Pristovsek, Markus
Kremzow, Raimund
Kneissl, Michael
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
[5] Influence of electron irradiation on carrier recombination and intradot relaxation in InGaAs/GaAs quantum dot structures
Sobolev, NA
Cavaco, A
Carmo, MC
Born, H
Grundmann, M
Heinrichsdorff, F
Heitz, R
Hoffmann, A
Bimberg, D
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001, 2001, : 146 - 149
[6] Persistent photoconductivity in quantum dot layers in InAs/GaAs structures
Kulbachinskii, VA
Lunin, RA
Kytin, VG
Rogozin, VA
Gurin, PV
Zvonkov, BN
Filatov, DO
2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1297 - 1300
[7] Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures
Buda, M.
Iordache, G.
Mokkapati, S.
Tan, H. H.
Jagadish, C.
Stancu, V.
Botila, T.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2008, 10 (02): : 323 - 326
[8] The mechanisms for linear polarization loss of in-plane photoluminescence of InGaAs/GaAs quantum well and quantum dot structures
Aleshkin, VY
Zvonkov, BN
Malkina, IG
Chernov, AL
Romanov, YA
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1999, 12 : 15 - 21
[9] Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
Kondratenko, S.V., 1600, American Institute of Physics Inc. (116):
[10] Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
Kondratenko, S. V.
Vakulenko, O. V.
Mazur, Yu. I.
Dorogan, V. G.
Marega, E., Jr.
Benamara, M.
Ware, M. E.
Salamo, G. J.
JOURNAL OF APPLIED PHYSICS, 2014, 116 (19)

← 1 2 3 4 5 →