Extrinsic spin Hall effect from anisotropic Rashba spin-orbit coupling in graphene

被引：27

作者：

Yang, H. -Y. ^{[1
]}

Huang, Chunli ^{[1
,2
]}

Ochoa, H. ^{[3
]}

Cazalilla, M. A. ^{[4
,5
,6
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[2] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[3] Fdn IMDEA Nanociencia, Madrid 28049, Spain

[4] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

[5] Natl Tsing Hua Univ, NCTS, Hsinchu 300, Taiwan

[6] DIPC, Manuel de Lardizabal 4, E-20018 San Sebastian, Spain

来源：

PHYSICAL REVIEW B | 2016年 / 93卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

GAS;

D O I：

10.1103/PhysRevB.93.085418

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the effect of anisotropy of the Rashba coupling on the extrinsic spin Hall effect due to spin-orbit active adatoms on graphene. In addition to the intrinsic spin-orbit coupling, a generalized anisotropic Rashba coupling arising from the breakdown of both mirror and hexagonal symmetries of pristine graphene is considered. We find that Rashba anisotropy can strongly modify the dependence of the spin Hall angle on carrier concentration. Our model provides a simple and general description of the skew scattering mechanism due to the spin-orbit coupling that is induced by proximity to large adatom clusters.

引用

页数：13

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