Fabrication of Ga2O3 thin films by aqueous solution deposition

被引：26
|
作者：
Ohya, Yutaka [1 ]
Okano, Jyunya [1 ]
Kasuya, Yuki [1 ]
Ban, Takayuki [1 ]
机构：
[1] Gifu Univ, Dept Mat Sci & Technol, Fac Engn, Gifu 5011193, Japan
来源：
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2009年 / 117卷 / 1369期
关键词：
Ga2O3 thin film; Aqueous solution deposition; Electrical resistivity; Microstructure; Optical property; BETA-GALLIUM OXIDE; OPTICAL-PROPERTIES; BETA-GA2O3; TEMPERATURE; SENSORS;
D O I：
10.2109/jcersj2.117.973
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ga2O3 thin films were fabricated using the Ga nitrate and GaOOH aqueous solutions. The films were crystallized as beta-Ga2O3 phase by heating at 700 degrees C and the band gap of resultant films was about 4.9 eV. The Mats were uniform and the film front Ga nitrate solution was dense with porosity of about 3%. The resistivity of the blank film was about 10(7) Omega cm. The doped films with Ti and Zr exhibited rectifying properties on ITO sputtered glass substrate. (C)2009 The Ceramic Society of Japan. All rights reserved.
引用
收藏
页码：973 / 977
页数：5
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