Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

被引：171

作者：

Kuzmík, J

Javorka, P

Alam, A

Marso, M

Heuken, M

Kordos, P

机构：

[1] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

[2] Res Ctr Julich, Inst Thin Films & Interfaces, ISG 1, D-52425 Julich, Germany

[3] Aixtron AG, D-52072 Aachen, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 08期

关键词：

III-nitrides; power FETs; semiconductor device measurements; semiconductor device thermal factors;

D O I：

10.1109/TED.2002.801430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor dc characterization methods. A negative differential output resistance is observed for high dissipated power levels. An analytical formula for a source-drain current drop as a function of parasitic source resistance and threshold voltage changes is proposed to explain this behavior. The transistor source resistance and threshold voltage is determined experimentally at different elevated temperatures to construct channel temperature versus dissipated power transfer characteristic. It is found that the HEMT channel temperature increases rapidly with dissipated power and at 6 W/mm reaches values of similar to320degreesC for sapphire and similar to95degreesC for silicon substrate, respectively.

引用

页码：1496 / 1498

页数：3

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