Tailoring of trap-related carrier dynamics in low-temperature-grown GaAs

被引：22
|
作者：
Smith, PWE [1 ]
Benjamin, SD [1 ]
Loka, HS [1 ]
机构：
[1] UNIV TORONTO,ONTARIO LASER & LIGHTWAVE RES CTR,TORONTO,ON M5S 1A4,CANADA
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 09期
关键词：
D O I：
10.1063/1.119852
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we present the results of an experimental study of low-temperature-growth GaAs, which clearly resolves separately both carrier trapping and recombination processes. We extend our previous model to account for the observed carrier dynamics, and show how the material growth and annealing conditions can be adjusted to optimize the material properties for all-optical device applications. (C) 1997 American Institute of Physics.
引用
收藏
页码：1156 / 1158
页数：3
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