Atomic layer deposition of Molybdenum Oxide for solar cell application

被引：13

作者：

Nandi, Dip K. ^{[1
]}

Sarkar, Shaibal K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Energy Sci & Engn, Bombay 400076, Maharashtra, India

来源：

POWER AND ENERGY SYSTEMS III | 2014年 / 492卷

关键词：

Atomic Layer Deposition; Quartz Crystal Microbalance; Molybdenum Oxide; Solar cell; GROWTH;

D O I：

10.4028/www.scientific.net/AMM.492.375

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This work focuses on synthesis of molybdenum oxide (MoO3)by Atomic layer deposition (ALD)using molybdenum hexacarbonyl [Mo(CO)(6)] and ozone. In-situ growth characteresticswerestudied by Quartz Crystal Microbalance (QCM). ALD temperature window for this material lies between 165 to 175 degrees C giving a maximum growth rate of 0.45 angstrom per ALD cycle. Negligible nucleation was found by QCM studyindicating a linear growth of the film. Effect of different oxidants on the growth rate is also studied.As-deposited film is amorphous in nature which converts to monoclinic-MoO3 after annealing as seen by taransmission electron microscopy.

引用

页码：375 / 379

页数：5

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