Growth morphology and compositional analysis of InxGa1-xSb crystals-grown by vertical directional solidification technique

被引：0

作者：

Gadkari, DB ^{[1
]}

Shashidharan, P ^{[1
]}

Lal, KB ^{[1
]}

Gokhale, NA ^{[1
]}

Shah, AP ^{[1
]}

Arora, BM ^{[1
]}

机构：

[1] Mithibai Coll, Dept Phys, Mumbai 400056, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1999年 / 37卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

InxGa1-xSb (x = 0.5) single crystals of 12 mm diameter and 50-60 mm length have been grown from stoichiometric source materials by using vertical directional solidification technique. The optimized growth conditions are ampoule translation velocity 0.84 mu m/sec, rotation speed 10 rpm and ampoule with argon pressure (100 torr). The axial compositional profile has been determined by Vegard-law and showed mixing of the melt. Hall measurements reveal the conversion of n-type to p-type conduction along the growth axis and vice versa. Radial resistivity measurements by foul probe exhibited the nearly homogeneous growth. The growth morphology was attributed to the intrinsic crystallographic microstructures.

引用

页码：652 / 656

页数：5

共 27 条

[21] Growth of GaxIn1-xSb bulk crystals for infrared device applications by vertical Bridgman technique
Krishan, B
Barman, PB
Mudahar, GS
Singh, NP
MATERIALS LETTERS, 2004, 58 (09) : 1441 - 1445
[22] Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
Huynh, Sa Hoang
Minh Thien Huu Ha
Huy Binh Do
Quang Ho Luc
Yu, Hung Wei
Chang, Edward Yi
APPLIED PHYSICS LETTERS, 2016, 109 (10) : 109 - 112
[23] Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique
Plaza, JL
Hidalgo, P
Méndez, B
Piqueras, J
Diéguez, E
JOURNAL OF CRYSTAL GROWTH, 2002, 241 (03) : 283 - 288
[24] The influence of temperature gradient and lowering speed on the melt-solid interface shape of GaxIn1-xSb alloy crystals grown by vertical Bridgman technique
Udayashankar, NK
Naik, KG
Bhat, HL
JOURNAL OF CRYSTAL GROWTH, 1999, 203 (03) : 333 - 339
[25] Comparative analysis of radiation-sensitive properties of detectors based on CdTe and Cd1-XZnxTe1-YSey single crystals grown by the vertical Bridgman technique
Bezsmolnyy, YV
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 458 (1-2): : 461 - 463
[26] Compositional variation in 0.65 PbMg2/3Nb1/3O3-0.35 PbTiO3 single crystals grown by high temperature solution growth technique
Bhaumik, I.
Singh, G.
Ganesamoorthy, S.
Karnal, A. K.
Tiwari, M. K.
Tiwari, V. S.
CRYSTAL RESEARCH AND TECHNOLOGY, 2007, 42 (04) : 356 - 360
[27] Synthesis, growth, structural, optical, luminescence, surface and HOMO LUMO analysis of 2-[2-(4-cholro-phenyl)-vinyl]-1-methylquinolinium naphthalene-2-sulfonate organic single crystals grown by a slow evaporation technique
Karthigha, S.
Kalainathan, S.
Rao, Kunda Uma Maheswara
Hamada, Fumio
Yamada, Manabu
Kondo, Yoshihiko
JOURNAL OF CRYSTAL GROWTH, 2016, 436 : 113 - 124

← 1 2 3 →