InGaAsP-InP dual-wavelength bipolar cascade lasers

被引：6
|
作者：
Yan, Jingzhou [1 ]
Cai, Jianxin
Ru, Guoyun
Yu, Xiuqin
Fan, J.
Choa, Fow-Sen
机构：
[1] Univ Maryland Baltimore Cty, Baltimore, MD 21250 USA
[2] Adtech Opt Inc, City Of Industry, CA 91748 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 13-16期
关键词：
bipolar cascade laser (BCL); broadband gain material; dual-wavelength laser; tunnel junction (TJ);
D O I：
10.1109/LPT.2006.880772
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the demonstration of an InGaAsP-InP-based dual-wavelength bipolar cascade laser. Simultaneous dual-wavelength (1350 and 1450 run) output at room temperature using pulsed excitation is achieved by epitaxially connecting two different active regions with a low area specific resistance (similar to 10(-4) Omega cm(2)) InAlAs-InP hetero-tunnel-junction. By connecting more active regions together, ultrabroadband gain materials may be obtained.
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页码：1777 / 1779
页数：3
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