Effect of oxidation on structural, optical and electrical properties of CdS thin films grown by sputtering

被引：46

作者：

Islam, M. A. ^{[1
]}

Haque, F. ^{[1
]}

Rahman, K. S. ^{[1
]}

Dhar, N. ^{[1
]}

Hossain, M. S. ^{[1
]}

Sulaiman, Y. ^{[1
]}

Amin, N. ^{[1
,2
]}

机构：

[1] Natl Univ Malaysia UKM, Solar Energy Res Inst, Bangi 43600, Malaysia

[2] Natl Univ Malaysia UKM, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Bangi 43600, Malaysia

来源：

OPTIK | 2015年 / 126卷 / 21期

关键词：

CdS thin films; Thermal annealing; Oxidization; UV-vis; FTIR; CHEMICAL BATH DEPOSITION; SOLAR-CELLS; NANOPARTICLES; CDS/CDTE; CBD;

D O I：

10.1016/j.ijleo.2015.07.078

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

CdS thin films of 150 nm thick were grown by sputtering technique on top of commercially available FTO coated glass substrates. The films are oxidized by subsequently annealed in oxygen ambient at 350 degrees C. XRD, EDX, FTIR analysis, UV-vis spectrometry and Hall Effect measurement were used to characterize the films. XRD studies confirm the polycrystalline nature of the deposited films with phase transition from hexagonal CdS to orthorhombic CdS:CdO mixed structure. It has been observed from the UV-vis and EDX characterizations that the band gap increases with the increase of oxygen concentration incorporated to the annealed CdS thin films as well as with the increase of the oxidation time. Band gaps of the films were found to be in the range of 2.52 -2.89 eV. Cd-S and Cd-O stretching vibration was observed from the FIR spectra. The film resistivity and mobility are observed to change inversely with the inclusion of 02 in the CdS thin films. (C) 2015 Elsevier GmbH. All rights reserved.

引用

页码：3177 / 3180

页数：4

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