LINEARITY IMPROVEMENT ANALYSIS FOR POWER AMPLIFIERS AT mm-WAVE FREQUENCIES

被引：4

作者：

Valliarampath, Joe ^{[1
]}

Sinha, Saurabh ^{[1
]}

机构：

[1] Univ Pretoria, Dept Elect Elect & Comp Engn, ZA-0002 Pretoria, South Africa

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2014年 / 56卷 / 03期

关键词：

60; GHz; intermodulation distortion 3rd component; linearization; predistortion; SiGe HBT power amplifier;

D O I：

10.1002/mop.28172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents an adaptive predistortion (APD) linearization technique to improve the linearity of millimeter-wave power amplifiers (PAs), specifically at 60 GHz. The PA and the APD were designed using the 0.13 μm SiGe BiCMOS process. The predistortion is applied to the PA by varying the gain of the PA through its variable gain amplifier. The PA achieves a PSAT of 11.97 dBm and IP1 dB of -10 dBm. After linearization the PA has an improved IP1 dB of -6 dBm. This linearization technique results in an optimum intermodulation distortion 3rd reduction of 10 dB. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:743-748, 2014 Copyright © 2014 Wiley Periodicals, Inc.

引用

页码：743 / 748

页数：6

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