Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

被引：29

作者：

Bak, Jun Yong ^{[1
]}

Ryu, Min-Ki ^{[2
]}

Park, Sang Hee Ko ^{[2
]}

Hwang, Chi Sun ^{[2
]}

Yoon, Sung Min ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, South Korea

[2] Elect & Telecommun Res Inst, Taejon 305350, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

In-Ga-Zn-O (IGZO); ZnO trap layer; oxide semiconductor; charge trap memory; top gate structure;

D O I：

10.1109/LED.2014.2301800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We proposed a charge-trap-type memory transistor with a top-gate structure composed of Al2O3 blocking/ZnO charge-trap/IGZO active/Al2O3 tunneling layer. The memory ON/OFF ratio higher than six-orders-of magnitude was obtained after the programming when the width and amplitude of program pulses were 100 ms and +/- 20 V, respectively. Excellent endurance was successfully confirmed under the repetitive programming with 10(4) cycles. The memory ON/OFF ratio higher than 10(3) was guaranteed even after the lapse of 10(4) s. Interestingly, the retention properties were affected by the bias conditions for read-out operations.

引用

页码：357 / 359

页数：3

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