Role of oxygen during CdTe growth for CdTe photovoltaic devices

被引：45

作者：

Korevaar, Bas A. ^{[1
]}

Cournoyer, James R. ^{[1
]}

Sulima, Oleg ^{[1
]}

Yakimov, Aharon ^{[1
]}

Johnson, James N. ^{[1
]}

机构：

[1] GE Global Res Ctr, Niskayuna, NY 12309 USA

来源：

PROGRESS IN PHOTOVOLTAICS | 2014年 / 22卷 / 10期

关键词：

solar energy; photovoltaics; polycrystalline thin films; cadmium telluride; record cell efficiency; SOLAR-CELL; POLYCRYSTALLINE; THICKNESS;

D O I：

10.1002/pip.2547

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Polycrystalline CdTe thin films for CdTe solar cell devices are typically grown using physical vapor techniques such as close-spaced sublimation or vapor transport deposition with, in some cases, a small amount of oxygen in the process gas. In this report, we discuss the results of growing CdTe films in an environment of pure oxygen using close-space sublimation. The results show that oxygen has a positive impact on CdTe film quality as it increases charge carrier mobility and lifetime in the absorber layer of CdTe-based devices. This has resulted in a 10-20mV improvement in open-circuit voltages when growing the CdTe in pure oxygen. Copyright (c) 2014 John Wiley & Sons, Ltd.

引用

页码：1040 / 1049

页数：10

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