Growth of β-Ga2O3 Films on Sapphire by Hydride Vapor Phase Epitaxy

被引：22

作者：

Xiong, Ze-Ning ^{[1
]}

Xiu, Xiang-Qian ^{[1
]}

Li, Yue-Wen ^{[1
]}

Hua, Xue-Mei ^{[1
]}

Xie, Zi-Li ^{[1
]}

Chen, Peng ^{[1
]}

Liu, Bin ^{[1
]}

Han, Ping ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, You-Dou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2018年 / 35卷 / 05期

关键词：

THIN-FILMS; SINGLE-CRYSTALS; C-PLANE; NANOWIRES; EDGE;

D O I：

10.1088/0256-307X/35/5/058101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two-inch Ga2O3 films with (201)-orientation are grown on c-sapphire at 850-1050 degrees C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure beta-Ga2O3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in beta-Ga2O3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9eV.

引用

页数：3

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