Determination of surface impurities on a gallium arsenide wafer by inductively coupled plasma mass spectrometry

被引：1

作者：

Kozuka, S ^{[1
]}

Sugamoto, J ^{[1
]}

Furukawa, K ^{[1
]}

Hayashi, M ^{[1
]}

机构：

[1] TOSHIBA CO LTD,SEMICOND MAT ENGN DEPT,KAWASAKI,KANAGAWA 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 7A期

关键词：

gallium arsenide wafer; inductively coupled plasma mass spectrometry; surface impurity; hydrofluoric acid; depth analysis; etching;

D O I：

10.1143/JJAP.36.L842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface impurities on a GaAs wafer were determined by inductively coupled plasma mass spectrometry to clarify the diffusion behavior which affected the layer construction. The sample was etched by hydrofluoric acid in a PTFE vessel at room temperature. Depth analysis of the wafer was performed by repeated etching as impurities were thought to exist near the wafer surface. Copper was difficult to dissolve by hydrofluoric acid due to an ionization tendency compared to the hydrogen ion. The method used in this study was demonstrated to be effective for determining surface impurities on a GaAs wafer for an impurity level of 10(11) atoms/cm(2) and for analyzing depth profiles from the surface.

引用

页码：L842 / L844

页数：3

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