Single-electron transistors with quantum dots

被引：4

作者：

Haug, RJ ^{[1
]}

Dilger, M ^{[1
]}

Schmidt, T ^{[1
]}

Blick, RH ^{[1
]}

vonKlitzing, K ^{[1
]}

Eberl, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY

来源：

PHYSICA B | 1996年 / 227卷 / 1-4期

关键词：

quantum dots; single-electron tunneling; spectroscopy;

D O I：

10.1016/0921-4526(96)00356-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.

引用

页码：82 / 86

页数：5

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