Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

被引：33

作者：

Pokatilov, E. P. ^{[1
]}

Nika, D. L. ^{[1
]}

Balandin, A. A. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Nanodevice Lab, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2349302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors show that the electron mobility can be strongly enhanced in AlN/GaN/AlN heterostructures with the shallow InxGa1-xN channel-nanogroove-in the middle of the potential well. The modified heterostructure has the room-temperature electron mobility, which is five times larger than that in conventional quantum wells. The maximum mobility enhancement is achieved for In content x approximate to 0.05, which is sufficient to weaken the intersubband electron scattering without leading to the substantial electron-interface-phonon scattering. The mobility enhancement is pronounced for a wide range of the carrier densities (10(11)-10(13) cm(-2)), which is important for GaN technology. (c) 2006 American Institute of Physics.

引用

页数：3

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