Gaining Confidence - A Review of Silicon Carbide's Reliability Status

Silicon carbide has the potential to replace silicon in a large spectrum of applications. To do so, SiC needs superior performance, a reasonable price and good reliability. However, there are a couple of properties and effects, which could compromise the reliability of SiC devices. Namely, power cycling capability, high temperature operation, bipolar degradation, susceptibility to humidity under operation and all kinds of MOS-issues require special attention. After SiC devices have matured to a level at which standard applications are no longer affected by reliability issues, it is now time to find out how far SiC devices can be pushed or what safety margin are required. As testing for the entire useful life is not an option, it is essential to find the right tests that can precisely quantify the degradation or can at least indicate if there is a possible risk. Finally, these tests have to become internationally recognized standards.