Wide band gap semiconductors. Good results and great expectations

被引:0
|
作者
Shur, MS [1 ]
Khan, MA [1 ]
机构
[1] APA INC, APA OPT, BLAINE, MN 55449 USA
来源
关键词
SILICON-CARBIDE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Wide band gap semiconductor devices in general and GaN-based electronic and photonic devices in particular have already demonstrated an impressive performance. Excellent transport and optoelectronic properties of GaN based materials should allow us to achieve a much better performance at elevated temperatures and in a harsh environment. In this paper, we compare important materials properties of SiC, GaN, and related wide-band semiconductors and consider recent progress in SIC and GaN-based field effect transistors and GaN-based photodetectors.
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页码:25 / 31
页数:7
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