Capacitance-voltage characterization of polyfluorene-based metal-insulator-semiconductor diodes

被引：58
|
作者：
Yun, M. [1 ]
Ravindran, R.
Hossain, M.
Gangopadhyay, S.
Scherf, U.
Buennagel, T.
Galbrecht, F.
Arif, M.
Guha, S.
机构：
[1] Univ Missouri, Dept Elect & Comp Engn, Columbia, MO 65211 USA
[2] Berg Univ Wuppertal, D-42097 Wuppertal, Germany
[3] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2219147
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal-insulator-semiconductor structures with conjugated polymer ethyl-hexyl substituted polyfluorene (PF2_6) as the active semiconductor layer, Al2O3 as the insulating oxide layer, and p(+)-Si as the metal layer have been characterized by means of capacitance-voltage (C-V) and conductance-voltage methods. The negative shift of the flat-band voltage with increasing frequency arises from positive interface charges in the PF2_6/Al2O3 layer. From C-V measurements the unintentional doping density is evaluated as similar to 5.7x10(17) cm(-3) at frequencies above 20 kHz. The interface trap density is estimated as similar to 7.7x10(11) eV(-1) cm(-2) at the flat-band voltage. (c) 2006 American Institute of Physics.
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页数：3
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