Inverted polymer solar cells using CdS fabricated by thermal decomposition of cadmium xanthate precursor as electron transporting layer

被引：4
|
作者：
Li, Cheng [1 ]
Yang, Chunyan [1 ]
Tong, Junfeng [1 ]
Li, Jianfeng [1 ]
Zhang, Peng [1 ]
Xia, Yangjun [1 ]
机构：
[1] Lanzhou Jiaotong Univ, Key Lab Optoelect Technol & Intelligent Control, Educ Minist, Lanzhou 730070, Peoples R China
来源：
SOLAR ENERGY | 2016年 / 139卷
基金：
中国国家自然科学基金;
关键词：
CdS; Cadmium xanthate precursor; Electron transporting layer; Inverted polymer solar cells; TRANSPARENT CONDUCTING OXIDE; INDIUM-TIN-OXIDE; THIN-FILM; OPTICAL-PROPERTIES; BUFFER LAYER; CONTROLLED GROWTH; NANOROD ARRAYS; DONOR-ACCEPTOR; ATOMIC LAYER; EFFICIENCY;
D O I：
10.1016/j.solener.2016.10.034
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this manuscript, CdS thin films fabricated by thermal decomposition of the solution processable cadmium xanthate precursor were used as electron transporting layer (ETL) in inverted polymer solar cells (IPSCs) with device structure ITO/CdS/poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl C-61 butyric acid methyl ester (PC61BM)/MoO3/Ag. The effects of CdS thickness and the annealing temperature of cadmium xanthate precursor on the photovoltaic performance of IPSCs were investigated. The highest power conversion efficiency (PCE) value of 3.22% was obtained when CdS thin film thickness was 10 nm and the annealing temperature of cadmium xanthate precursor was 160 degrees C. This value is slightly higher than that of the IPSC with device structure ITO/ZnO/P3HT:PC61BM/MoO3/Ag using sol-gel derived ZnO thin films as ETL. The results indicate that CdS films deposited by thermal decomposition of metal xanthate precursor are excellent ETL for IPSCs. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：770 / 775
页数：6
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