Buffer effect on GMR in thin Co/Cu multilayers

被引:6
|
作者
Bouziane, K
Al Rawas, AD
Maaza, M
Mamor, M
机构
[1] Sultan Qaboos Univ, Phys Dept, Muscat, Oman
[2] MRG, iThemba Labs, ZA-7129 Somerset W, South Africa
[3] CNRS, LCMTR, UPR 209, F-94320 Thiais, France
关键词
Co/Cu multilayer structure; magnetic materials; electrical properties; buffer effect; interfacial roughness;
D O I
10.1016/j.jallcom.2005.07.038
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
[Co(1.1 nm)/Cu(0.9 nm)](x25) multilayers (MLs) with different textures and interfacial Co-Cu roughness have been obtained by depositing them on different buffer layers (Fe, Cr, Cu, Co, Ta or Al) 8 nm thick using an unusual RF sputtering method. An attempt has been made to understand the correlation between the interfacial roughness and giant magnetoresistance (GMR) from the magnetic properties of Co/Cu MLs. It has been observed that high GMR is weakly dependent on the texture of MLs. High GMR has been observed in either in weakly textured (200) Co/Cu MLs (GMR similar to 45%) or strongly oriented (111) Co/Cu MLs (GMR similar to 30%). However, a strong correlation between interfacial roughness and magneto-transport properties of sputtered Co/Cu(0.9 nm) MLs (corresponding to the first maximum of anti ferromagnetic exchange coupling) has been determined. Contribution to GMR from superparamagnetic (SPM) interfacial region has been analyzed in terms of the Langevin function and also the expected standard linear dependence of GMR versus (M/M-s)(2) for magnetoresistive granular-type Co-Cu system. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:42 / 47
页数:6
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