Characterization and Circuit Modeling of Graphene Nano Ribbon Field Effect Transistors

被引：0

作者：

Nakkala, P. ^{[1
]}

Meng, N. ^{[2
]}

Martin, A. ^{[1
]}

Campovecchio, M. ^{[1
]}

Happy, H. ^{[3
]}

机构：

[1] XLIM UMR CNRS 6172, F-87060 Limoges, France

[2] Zhejiang Univ, Hangzhou 310027, Peoples R China

[3] IEMN UMR CNRS 8520, F-59652 Villeneuve Dascq, France

来源：

2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2014年

关键词：

Graphene; GNR-FET; small signal model; pulsed characterization; de-embedding;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the pulsed I-V and microwave characterizations of a Graphene Nano Ribbon FET (GNR-FET) for nonlinear electrical modeling. The extraction method of model parameters is based on the characterization of three specific technological structures called PAD, MUTE and FET (integrating only the coplanar access structure, the FET without graphene, and the entire GNR-FET) respectively. The differences between DC and pulsed I-V characterizations of the GNR FET and the evolution of its multi-bias S-parameters are investigated and compared to simulations. The nonlinear modeling of GNR FET is becoming of prime importance along with technological efforts to study the actual potential of this emerging technology.

引用

页数：4

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