A Low Power 6T-4C Non-volatile Memory using Charge Sharing and Non-precharge Techniques

被引：0

作者：

Nakagawa, Tomoki ^{[1
]}

Izumi, Shintaro ^{[1
]}

Yanagida, Koji ^{[1
]}

Kitahara, Yuki ^{[1
]}

Yoshimoto, Shusuke ^{[1
]}

Umeki, Yohei ^{[1
]}

Mori, Haruki ^{[1
]}

Kitahara, Hiroto ^{[1
]}

Kawaguchi, Hiroshi ^{[1
]}

Kimura, Hiromitsu ^{[2
]}

Marumoto, Kyoji ^{[2
]}

Fuchikami, Takaaki ^{[2
]}

Fujimori, Yoshikazu ^{[2
]}

Yoshimoto, Masahiko ^{[1
]}

机构：

[1] Kobe Univ, Kobe, Hyogo 657, Japan

[2] Rohm Co Ltd, Kyoto, Japan

来源：

2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2015年

关键词：

Nonvolatile memory; FeRAM; Low power;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This report describes a low power 6T-4C nonvolatile memory design using a bit-line non-precharge and plate-line charge-share techniques. Two proposed techniques contribute to decrease energy consumption. The bit-line non-precharge technique can reduce 73% of write energy consumption and 76% of read energy consumption. The plate-line charge-share technique can reduce 22% of store energy consumption and 11% of recall energy consumption.

引用

页码：2904 / 2907

页数：4

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