Bohm trajectories for the modeling of tunneling devices

被引：0

作者：

Sune, J ^{[1
]}

Oriols, X ^{[1
]}

GarciaGarcia, JJ ^{[1
]}

Martin, F ^{[1
]}

Gonzalez, T ^{[1
]}

Mateos, J ^{[1
]}

Pardo, D ^{[1
]}

机构：

[1] Univ Salamanca, E-37008 Salamanca, SPAIN

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

Computer simulation - Current voltage characteristics - Electron scattering - Electron tunneling - Monte Carlo methods - Quantum theory - Semiconductor device models - Tunnel diodes;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.

引用

页码：125 / 128

页数：4

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