InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics

被引：0
|
作者：
Lee, Andrew [1 ]
Tang, Mingchu [1 ]
Jiang, Qi [1 ]
Wu, Jiang [1 ]
Seeds, Alwyn [1 ]
Liu, Huiyun [1 ]
机构：
[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
来源：
2013 IEEE PHOTONICS CONFERENCE (IPC) | 2013年
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the development of InAs/GaAs quantum-dot devices monolithically grown on Si substrates for silicon photonics. Room-temperature cw lasing at 1.3 mu m has been demonstrated for the InAs/ GaAs quantum-dot devices on Si substrates.
引用
收藏
页码：474 / 475
页数：2
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