Resistive Switching in Pt/Ta2O5/TiN Structure for Nonvolatile Memory Application

被引：0
|
作者：
Lin, Jian-Yang [1 ]
Chen, Jyun-Hao [2 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Yunlin, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Grad Sch Elect & Optoelect Engn, Yunlin 640, Taiwan
来源：
2013 IEEE 8TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2013年
关键词：
RESISTANCE; FILMS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The bipolar resistive switching characteristics of the Ta2O5-based resistive random access memories with a Pt/Ta2O5/TiN structure are investigated in this work. The proposed device exhibits a small set voltage of 0.76 V. The resistance ratio of ON/OFF state has a good stability with the compliance current of 1 mA and 10mA that is useful for the multi-level data storage application. In addition, good endurance larger than 10(5) cycles under pulse switching operation and retention characteristics up to 10(4) s at room temperature have been achieved in this work.
引用
收藏
页码：20 / 23
页数：4
相关论文
共 50 条
  • [21] Study of dry and electrogenerated Ta2O5 and Ta/Ta2O5/Pt structures by XPS
    Kerrec, O
    Devilliers, D
    Groult, H
    Marcus, P
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 55 (1-2): : 134 - 142
  • [22] Electrode material dependence of resistive switching behavior in Ta2O5 resistive analog neuromorphic device
    Shima, Hisashi
    Takahashi, Makoto
    Naitoh, Yasuhisa
    Akinaga, Hiroyuki
    2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), 2018, : 62 - 64
  • [23] Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device
    Huang, Hsin-Hung
    Shih, Wen-Chieh
    Lai, Chih-Huang
    APPLIED PHYSICS LETTERS, 2010, 96 (19)
  • [24] Synergistic Resistive Switching Mechanism of Oxygen Vacancies and Metal Interstitials in Ta2O5
    Zhu, Linggang
    Zhou, Jian
    Guo, Zhonglu
    Sun, Zhimei
    JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (04): : 2456 - 2463
  • [25] Enhancement of memory windows in Pt/Ta2O5 - x/Ta bipolar resistive switches via a graphene oxide insertion layer
    Chung, Je Bock
    Bae, Yoon Cheol
    Lee, Ah Rahm
    Baek, Gwang Ho
    Lee, Min Yong
    Yoon, Hee Wook
    Park, Ho Bum
    Hong, Jin Pyo
    THIN SOLID FILMS, 2015, 587 : 57 - 60
  • [26] Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability
    Park, Tae Hyung
    Kim, Hae Jin
    Park, Woo Young
    Kim, Soo Gil
    Choi, Byung Joon
    Hwang, Cheol Seong
    NANOSCALE, 2017, 9 (18) : 6010 - 6019
  • [27] Multi-level resistive switching observations in asymmetric Pt/Ta2O5-x/TiOxNy/TiN/Ta2O5-x/Pt multilayer configurations
    Lee, Ah Rahm
    Bae, Yoon Cheol
    Baek, Gwang Ho
    Im, Hyun Sik
    Hong, Jin Pyo
    APPLIED PHYSICS LETTERS, 2013, 103 (06)
  • [28] Electronic transport in Ta2O5 resistive switch
    Sakamoto, Toshitsugu
    Lister, Kevin
    Banno, Naoki
    Hasegawa, Tsuyoshi
    Terabe, Kazuya
    Aono, Masakazu
    APPLIED PHYSICS LETTERS, 2007, 91 (09)
  • [29] Resistive memory switching of CuxO films for a nonvolatile memory application
    Lv, H. B.
    Yin, M.
    Fu, X. F.
    Song, Y. L.
    Tang, L.
    Zhou, P.
    Zhao, C. H.
    Tang, T. A.
    Chen, B. A.
    Lin, Y. Y.
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) : 309 - 311
  • [30] Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices
    Yang, Min Kyu
    Park, Jae-Wan
    Ko, Tae Kuk
    Lee, Jeon-Kook
    APPLIED PHYSICS LETTERS, 2009, 95 (04)
12345