A study on the formation of a porous morphology in Cd2SnO4 thin films prepared by MOD process

被引：7
|
作者：
Ronconi, C [1 ]
Alves, OL [1 ]
机构：
[1] UNICAMP, Inst Quim, LQES, BR-13081970 Campinas, SP, Brazil
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2002年 / 374卷
关键词：
Cd2SnO4; transparent conducting films; MOD; metallorganic decomposition;
D O I：
10.1080/10587250210499
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Transparent and conductive Cd2SnO4 films were prepared by Metallorganic Decomposition technique. Cadmium and tin 2-ethylhexanoates were dissolved in xylene and 2-ethylhexanoic acid, respectively, and the solution formed was used as precursor. The films were deposited by dip coating on borosilicate glass and quartz, and annealed at 600 and 620degreesC. Films with high uniformity, thickness of 350 nm, optical transmission higher than 92% (Eg similar to 3.06 eV), and resistivity c.a. 10(-3) Omega.cm were obtained. The nature of solvent is important to control the film morphologies.
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页码：275 / 280
页数：6
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