Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications

被引：13
|
作者：
Weiss, B. [1 ]
Reiner, R. [1 ]
Waltereit, P. [1 ]
Mueller, S. [1 ]
Wespel, M. [1 ]
Quay, R. [1 ]
Ambacher, O. [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, IAF, Tullastr 72, D-79108 Freiburg, Germany
来源：
2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2015年
关键词：
AlGaN/GaN-on-Si; HEMT; multilevel converter; power conversion; lateral monolithic integration;
D O I：
10.1109/CSICS.2015.7314516
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work reports on the development of a fully integrated monolithic single-phase diode-clamped multilevel (DCM) converter in a high-voltage AlGaN/GaN-on-Si technology for high-power conversion applications. The power chip operates as an inverter (DC/AC) to produce a three-level output voltage from a DC link as well as a rectifier (AC/DC) to feed a DC link with a desired voltage. The application range, the topology, and the design of the inverter are presented in detail. The integrated inverter circuit is dimensioned for Umax = +/- 400 V and I-max = 5 A. Furthermore measurements of the performance of the single devices on the integrated chip are demonstrated.
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页数：4
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