Advancements in 300 mm GaN-on-Si Technology With Industry's First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors

Advancements in 300 mm GaN-on-Si enhancement-mode (E-mode) GaN N-MOSHEMT technology featuring monolithically integrated Si pMOS by layer transfer are presented. In this work, a true gate-last flow is employed, where the high-temperature activation steps of the Si pMOS transistors are completed before depositing the gate dielectric of the GaN N-MOSHEMT. In addition to the Si pMOS integration, GaN N-MOSHEMT performance is enhanced with an f(MAX) of 335 GHz ( L-G = 90 nm). A mmWave power amplifier (PA) with a high area power density of 3.11 W/mm(2) and 99.1 dB figure-of-merit is demonstrated using the improved GaN N-MOSHEMT. Employing GaN N-MOSHEMT and Si pMOS, a vector modulator-based mmWave phase shifter with a 5-bit current-controlled digital-to-analog converter (DAC) is designed and fabricated in this process. The phase shifter achieves full functionality with 360 degrees phase tuning coverage, 5.3 (degrees) measured RMS phase error, and less than +/- 1.7 dB magnitude variation across different phase states, occupying 0.12 mm(2) . This is the industry's first demonstration of a complex monolithic GaN-Si CMOS circuit, implemented in 300 mm GaN-on-Si technology.