Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers

被引：11

作者：

Neudeck, PG

Powell, JA

Trunek, AJ

Spry, DJ

机构：

[1] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA

[2] NASA Glenn, Sest Inc, Cleveland, OH 44135 USA

[3] NASA Glenn, OAI, Cleveland, OH 44135 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷

关键词：

3C-SiC; step-free surface; heteroepitaxy; epitaxial growth; CVD; etch pits; dislocations; screw dislocations; web growth; cantilevers; mesas; on-axis epitaxy; KOH;

D O I：

10.4028/www.scientific.net/MSF.457-460.169

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The off-axis approach to SiC epitaxial growth has not prevented many substrate crystal defects from propagating into SiC epilayers, and does not permit the realization of SiC heteropolytype devices. This paper reviews recent advancements in SiC epitaxial growth that begin to overcome the above shortcomings for arrays of device-sized mesas patterned into on-axis 4H/6H-SiC wafers. These on-axis mesa growth techniques have produced 4H/6H-SiC homoepilayers and 3C-SiC heteroepilayers with substantially lower dislocation densities. The results should enable improved homojunction and heterojunction silicon carbide prototype devices.

引用

页码：169 / 174

页数：6

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