High-power quantum-dot superluminescent diodes with p-doped active region

被引：23
|
作者：
Rossetti, Marco [1 ]
Li, Lianhe
Fiore, Andrea
Occhi, Lorenzo
Velez, Christian
Mikhrin, Sergey
Kovsh, Alexey
机构：
[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland
[2] EXALOS AG, CH-8952 Schlieren, Switzerland
[3] Nanosemicond GmbH, D-44263 Dortmund, Germany
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 17-20期
关键词：
gain; optical coherence tomography (OCT); p-doping; quantum dot (QD); superluminescent diode; temperature characteristics;
D O I：
10.1109/LPT.2006.882303
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability.
引用
收藏
页码：1946 / 1948
页数：3
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