Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling

Nitrogen segregation and coprecipitation with oxygen in N-doped Czochralski (N-CZ) silicon wafers are investigated as a function of depth based on extended defect structure and chemical composition. High resolution nitrogen and oxygen secondary ion mass spectroscopy imaging revealed strong coupling of oxygen with nitrogen in annealed as well as in "as-grown" N-CZ Si wafers. In both cases, the near-surface regions appeared highly supersaturated in N and O forming a continuum of defects initiated by N-O complexes. The N and O stoichiometry depth profiles were found to depend on the material thermal history. The spatial variation of the stoichiometry ratio was also determined for precipitates using a combination of scanning transmission electron microscope (STEM) in Z-contrast mode with electron energy loss spectroscopy. The precipitate atomic and microstructures, analyzed by high resolution TEM and STEM, clearly demonstrate that second phase precipitate is precursor to a third phase that is an outer oxynitride shell. Nitrogen and oxygen cosegregation from the matrix to the precipitate interface occurs in a similar fashion as in the subsurface region. We propose a mechanism for oxygen precipitation in N-CZ Si based on N segregation to the interface while oxygen is trapped inside the oxynitride shell. (C) 2004 American Institute of Physics.