Optical absorption coefficient of polycrystalline silicon with very high oxygen content

被引:8
|
作者
Serra, JM
Gamboa, R
Vallera, AM
机构
[1] Dep. de Fisica, Univiversidade de Lisboa, Campo Grande, ED-C1
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 36卷 / 1-3期
关键词
silicon; optical properties; solar cells;
D O I
10.1016/0921-5107(95)01277-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report measurements of the room temperature optical absorption coefficient alpha(lambda) of polycrystalline silicon ribbon material with high oxygen concentration (1.7 x 10(18) at. cm(-3)) in the spectral range from 800 to 1200 nm. Between 800 and 1000 nm, absolute error is estimated as approximate to 2%. Sample to sample variations in this range are +/- 2%, and differences from Czochralski control samples are also within 2%. Within the experimental error, the oc(lambda) for our ribbon samples is indistinguishable from that of monocrystalline silicon between 800 and 1000 nm. Our data are well fitted in this region by alpha(lambda) = (85.6/lambda, - 77.7)(2), with lambda in mu m and alpha in cm(-1). Although the experimental error rises sharply at longer wavelengths due to maximum ribbon thickness of only 450 mu m, we can state that our results are consistent with the data compiled by Green [1] between 800 and 1200 nm for pure monocrystalline silicon.
引用
收藏
页码:73 / 76
页数:4
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