AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer

被引：18
|
作者：
Maeda, Takuya [1 ]
Page, Ryan [2 ]
Nomoto, Kazuki [3 ]
Toita, Masato [4 ]
Xing, Huili Grace [1 ,2 ,3 ]
Jena, Debdeep [1 ,2 ,3 ]
机构：
[1] Cornell Univ, Kavli Inst, Cornell Nanoscale Sci, Ithaca, NY 14853 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14850 USA
[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14850 USA
[4] Asahi Kasei Corp, Adv Devices Technol Ctr, Chiyoda Ku, Hibiya Mitsui Tower,1-1-2 Yurakucho, Tokyo 1008440, Japan
来源：
APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 06期
基金：
美国国家科学基金会;
关键词：
AlN; ultra wide bandgap; schottky barrier diode; thermionic emission; VOLTAGE; GAN;
D O I：
10.35848/1882-0786/ac702e
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an AlN bulk substrate. An undoped AlN layer, a Si-doped Al0.9Ga0.1N current spreading layer and an AlN buffer layer were grown by plasma-enhanced molecular beam epitaxy. The epitaxial AlN layer was etched down to the n-Al0.9Ga0.1N layer to form an Ohmic contact. Ni/Au and V/Al/Ni/Au were deposited on the top AlN layer as Schottky contacts and on the exposed n-Al0.9Ga0.1N layer as Ohmic contacts, respectively. The Ohmic characteristics on the n-Al0.9Ga0.1N layer, capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the AlN SBD were investigated.
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页数：5
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