Hydrothermal synthesis, characterization and properties of boron-doped ZnO sheets grown on p-diamond film

被引:17
|
作者
Yu, Qi [1 ]
Li, Hongdong [2 ]
Wang, Qiliang [2 ]
Cheng, Shaoheng [2 ]
Jiang, Liyun [1 ]
Zhang, Yingtang [1 ]
Ai, Taotao [1 ]
Guo, CongSheng [1 ]
机构
[1] Shaanxi Univ Technol, Sch Mat Sci & Engn, Hanzhong 723001, Peoples R China
[2] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO structures; Diamond; Semiconductors; Electrical properties; NITROGEN;
D O I
10.1016/j.matlet.2014.04.184
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Boron (B) doped zinc oxide (ZnO) sheets have been fabricated on p-diamond substrate by hydrothermal technique. The B atom in the reaction solution plays a key role in the formation of ZnO sheets. The B-ZnO/p-diamond heterojunction shows an evident rectifying behavior, the influence of grain boundaries in electrical characteristics has been analyzed, the transport mechanism is discussed by the recombination tunneling at lower and the space-charge limited current at higher forward voltages. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:284 / 286
页数:3
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