Substrate bias dependence of the structure and internal stress of TiN films deposited by the filtered cathodic vacuum arc

被引:13
|
作者
Cheng, YH
Tay, BK
Lau, SP
机构
[1] Huazhong Univ Sci & Technol, State Key Lab Plast Forming Simulat & Die & Mould, Wuhan 430074, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol, State Key Lab Laser Technol, Wuhan 430074, Hubei, Peoples R China
[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
D O I
10.1116/1.1482708
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
TiN films were deposited by an off-plane double bend filtered cathodic vacuum arc technique. Atomic force microscopy and x-ray diffraction were used to study the surface morphology and crystal structure. Substrate bending methods were used to determine the internal stress in the films. The influence of substrate bias on the structure and internal stress were systematically studied. As substrate bias is increased to -100 V, the surface roughness decreases to the minimum, the preferred orientation changes gradually from (200) to (111), and the internal stress increases greatly to the maximum. Further increase of substrate bias results in the drastic increase of surface roughness and the gradual decrease of internal stress. The preferred orientation changes gradually from (I 11) to (200). Except for the atomic peening, the change in the structure and preferred orientation also contributes to the variation of internal stress in the films with substrate bias. (C) 2002 American Vacuum Society.
引用
收藏
页码:1327 / 1331
页数:5
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