Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials

被引：28

作者：

Kim, Sang-Hyeon ^{[1
,2
]}

Kim, Seong-Kwang ^{[1
]}

Shim, Jae-Phil ^{[3
]}

Geum, Dae-Myeong ^{[1
,5
]}

Ju, Gunwu ^{[3
]}

Kim, Han-Sung ^{[3
,6
]}

Lim, Hee-Jeong ^{[3
,7
]}

Lim, Hyeong-Rak ^{[1
,7
]}

Han, Jae-Hoon ^{[1
]}

Lee, Subin ^{[1
]}

Kim, Ho-Sung ^{[1
,6
,7
]}

Bidenko, Pavlo ^{[1
,2
]}

Kang, Chang-Mo ^{[4
]}

Lee, Dong-Seon ^{[4
]}

Song, Jin-Dong ^{[1
,2
]}

Choi, Won Jun ^{[1
]}

Kim, Hyung-Jun ^{[2
,3
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

[2] Korea Univ Sci & Technol, Div Nano & Informat Technol, KIST Sch, Seoul 02792, South Korea

[3] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea

[4] Gwangju Inst Sci & Technol, Sch Elect Engn & Comp Sci, Gwangju 61005, South Korea

[5] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[6] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 02841, South Korea

[7] Korea Univ, Dept Elect & Comp Engn, Seoul 02841, South Korea

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Heterogeneous integration; monolithic; 3D; sequential; layer transfer; wafer bonding; epitaxial lift-off; III-V-OI; GOI; thin film PD; mid-IR photonics; microLED; SI SUBSTRATE; MIDINFRARED PHOTONICS; SILICON; FABRICATION;

D O I：

10.1109/JEDS.2018.2802840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic 3-D integration has emerged as a promising technological solution for traditional transistor scaling limitations and interconnection bottleneck. The challenge we must overcome is a processing temperature limit for top side devices in order to ensure proper performance of bottom side devices. To solve this problem, we developed a low temperature III-V and Ge layer stacking process using wafer bonding and epitaxial lift-off, since these materials can be processed at a low temperature and provide extended opportunity/functionality (sensor, display, analog, RF, etc.) via heterogeneous integration. In this paper, we discuss technology for integrating III-V and Ge materials and its applicability to CMOS, thin film photodiodes, mid-infrared photonics platforms, and MicroLED display integration for creating the ultimate 3-D chip of the future.

引用

页码：579 / 587

页数：9

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