Temperature dependence of the thermal expansion of AlN

被引：75

作者：

Figge, Stephan ^{[1
]}

Kroencke, Hanno ^{[1
]}

Hommel, Detlef ^{[1
]}

Epelbaum, Boris M. ^{[2
]}

机构：

[1] Univ Bremen, Sect Semicond Epitaxy, Inst Solid State Phys, D-28359 Bremen, Germany

[2] Univ Erlangen Nurnberg, Dept Werkstoffwissensch, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

关键词：

aluminium compounds; chemical vapour deposition; gallium compounds; III-V semiconductors; thermal expansion; wide band gap semiconductors; X-ray diffraction; CRYSTALS; SILICON; GAN;

D O I：

10.1063/1.3089568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal expansion of wurtzite AlN bulk crystals grown by physical vapor transport was studied by high resolution x-ray diffraction in a temperature range from 20 to 1250 K. The temperature dependence of the derived anisotropic thermal expansion coefficients along the a- and c-directions could be well described over the entire temperature range within both the Debye model and the Einstein model. In comparison to GaN, larger expansion coefficients and higher characteristic temperatures have been found. The resulting thermal mismatch of AlGaN/GaN heterostructures are presented.

引用

页数：3

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