An integrated silicon interferometric temperature sensor

被引：11
|
作者：
Cocorullo, G
DellaCorte, FG
Iodice, M
Rendina, I
Sarro, PM
机构：
[1] CNR,IST RIC ELETTROMAGNETISMO & COMPONENTI ELETTR,I-80124 NAPLES,ITALY
[2] DELFT UNIV TECHNOL,DIMES,NL-2600 GB DELFT,NETHERLANDS
[3] UNIV CALABRIA,DIPARTIMENTO ELETTR INFORMAT & SISTEMIST,I-87036 RENDE,CS,ITALY
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1997年 / 61卷 / 1-3期
关键词：
Fabry-Perot cavities; interferometric sensors; integrated sensors; silicon; temperature sensors;
D O I：
10.1016/S0924-4247(97)80273-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An integrated interferometric temperature sensor, realized on a silicon substrate, is presented. The device consists of an array of planar Fabry-Perot waveguiding cavities realized by plasma etching and standard microelectronic techniques. Experimental data demonstrating the monitoring of temperature variation both in modulus and sign, with a resolution of approximately 1 degrees C, are reported. The influence of the cavity losses and size on the sensor performance is discussed. The realization of amorphous silicon-based guided-wave sensors is then suggested to obtain better temperature resolution.
引用
收藏
页码：267 / 272
页数：6
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