n-type AlN layer by Si ion implantation

n-type AlN layer was obtained by Si ion implantation and the subsequent activation annealing. Si ions were implanted to an unintentionally doped AlN layer grown on a sapphire substrate at an acceleration energy of 90 keV with a dose of 5x10(15) cm(-2). The activation annealing was performed at 1400 degrees C for 10 min in a nitrogen ambient. We characterized it by Hall-effect measurements in a temperature range from 373 to 873 K. These revealed that the carrier type exhibited n type, the carrier concentration at 373 K was approximately 8.8x10(15) cm(-3), and that the Hall mobility at 373 K was as high as 20 cm(2) V-1 s(-1). The donor ionization energy was 294 meV. The Hall mobility varied as T-1.1 (T is the absolute temperature) above 523 K. (c) 2006 American Institute of Physics.