Crystallography of Excimer laser-crystallized In-Ga-Zn-O film

被引：0

作者：

Shimomura, Akihisa ^{[1
]}

Koyama, Masaki ^{[1
]}

Ishiyama, Takahisa ^{[1
]}

Ohta, Masashi ^{[1
]}

Tsubuku, Masashi ^{[1
]}

Kikuchi, Erumu ^{[1
]}

Hirohashi, Takuya ^{[1
]}

Takahashi, Masahiro ^{[1
]}

Yamazaki, Shunpei ^{[1
]}

机构：

[1] Semicond Energy Lab Co Ltd, Atsugi, Kanagawa 2430036, Japan

来源：

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS | 2013年

关键词：

SYSTEM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is found by nanobeam electron diffraction that the excimer laser crystallization of In-Ga-Zn-O films which are not c-axis-aligned can lead to formation of polycrystalline In-Ga-Zn-O thin films having spinel structures. The crystal structure of ZnInxGa2-xO4 in which Ga site of ZnGa2O4 is substituted by In was obtained by first-principle calculation. It has been revealed that the unitcell constants and out-of-plane XRD peak angles (2 theta) which are calculated from electron diffraction are reproduced in x = 0.5-1. In contrast, in the case of performing laser crystallization on a CAAC-IGZO film as a precursor, although polycrystalline In-Ga-Zn-O thin films having homologous structures are formed, formation of spinel structures is not observed.

引用

页码：155 / 158

页数：4

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