Thermoelectric power in off-stoichiometric ThAsSe system

被引:1
|
作者
Gnida, D [1 ]
Henkie, Z [1 ]
Wojakowski, A [1 ]
Cichorek, T [1 ]
机构
[1] Polish Acad Sci, Inst Low Temp & Struct Res, PL-50950 Wroclaw, Poland
关键词
structural two-level systems; electronic transport;
D O I
10.1016/j.physb.2006.01.371
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Transport properties of ThAsSe single crystals with various As-Se chemical composition were investigated in the temperature range 4.2-300 K. Electrical resistivity significantly decreases with increasing off-stoichiometry (As/Se content ratio around 2), although the negative temperature coefficient of the resistivity is observed down to liquid-helium temperature. On the other hand, an overall temperature dependence of the thermoelectric power is much less affected by a distinct deviation from the stoichiometry. This points out that a change of the electron density dominates effects incorporated by structural disorder. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:974 / 975
页数:2
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