Chemistry-mediated two-dimensional to three-dimensional transition of In thin films

被引:2
|
作者
Wei, HL
Huang, HC [1 ]
Woo, CH
Zhang, XX
Zhou, LG
机构
[1] Rensselaer Polytech Inst, Dept Mech Aerosp & Nucl Engn, Troy, NY 12180 USA
[2] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hong Kong, Hong Kong, Peoples R China
[3] Huazhong Univ Sci & Technol, Dept Phys, Wuhan 430074, Peoples R China
[4] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[5] Hong Kong Univ Sci & Technol, Inst Nano Sci & Technol, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.1767595
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter reports a mechanism of chemistry-mediated two-dimensional to three-dimensional (2D-3D) transition during In thin film deposition, and the corresponding evolution of nanoscale islands. Using magnetron sputtering technique, we deposit In on Au substrate. Despite the fact that In wets on Au, In islands prevail over the uniform film soon after the deposition starts. The 2D-3D transition is found to be a result of the formation of Au3In on the Au substrate. The alloy formation leads to nonwetting of In, thereby the high mobility of In atoms and In clusters, and eventually well-separated In islands. The structures of In and Au are characterized by scanning electron microscopy, transmission electron microscopy, and electron diffraction. (C) 2004 American Institute of Physics.
引用
收藏
页码:5401 / 5403
页数:3
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