Magnetoresistance effect in asymmetric dual spin-valves -: a device for three-state logic

被引：2
|
作者：
Lucinski, T
Urbaniak, M
Brückl, H
Hütten, A
Heitmann, S
Reiss, G
机构：
[1] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
[2] Univ Bielefeld, Fac Phys, D-33501 Bielefeld, Germany
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷
关键词：
multilavers; giant magnetoresistance; spin-valve;
D O I：
10.1016/j.jmmm.2003.12.1249
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We show that for asymmetric dual spin-valves MnIr/CoFe1/Cu/Py1/Cu/Py2/CoFe2/MnIr (Py denotes Ni80Fe20 Permalloy alloy), the application of two different ferromagnetic materials as pinned layers can result in appearance of three well-separated stages in giant magnetoresistance (GMR) effect reflecting three different and almost independent magnetization reversal processes. For the correct choice of the constituent layer thicknesses, the GMR amplitude of the dual spin-valve can depend on the field sweep direction. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：1889 / 1891
页数：3
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