TiN Metal Hardmask Etch Residues Removal with AlN Etch

被引：0
|
作者：
Cui, Hua [1 ]
机构：
[1] DuPont Elect & Commun, Hayward, CA 94545 USA
来源：
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XIII | 2016年 / 255卷
关键词：
Metal hardmask; etch residues removal; sidewall polymer; TiN; AlN etches; Cu/low-k;
D O I：
10.4028/www.scientific.net/SSP.255.242
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A wet cleaning formulation with tunable AlN etch rate approach was developed. The formula is compatible with Cu, Co and low-k materials, is able to remove etch residues and does not contain fluoride.
引用
收藏
页码：242 / 244
页数：3
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