TiN Metal Hardmask Etch Residue Removal with Mask Pullback and Complete Mask Removal for Cu Dual Damascene Device

被引：0
|
作者：
Cui, Hua [1 ]
机构：
[1] DuPont EKC Technol, Hayward, CA USA
来源：
2012 23RD ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC) | 2012年
关键词：
Etch residue removal; TiN Metal hardmask; Cu/low-k; single wafer cleaning; TiN etch;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Formulations with TiN/Cu etch rate selectivity greater than 60 at 40 degrees C for TiN pullback and 200 at 55 degrees C for complete TiN mask removal, respectively, have been developed. The formulations are compatible with Cu, low-k and SiON materials, and prevent Cu re-oxidation.
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页码：305 / 307
页数：3
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