Franz-Keldysh effect in epitaxial ZnO thin films

被引：11

作者：

Bridoux, G. ^{[1
]}

Villafuerte, M. ^{[1
]}

Ferreyra, J. M. ^{[1
]}

Guimpel, J. ^{[2
,3
]}

Nieva, G. ^{[2
,3
]}

Figueroa, C. A. ^{[1
]}

Straube, B. ^{[1
]}

Heluani, S. P. ^{[1
]}

机构：

[1] Univ Nacl Tucuman, CONICET, Fac Ciencias Exactas & Tecnol, Lab Fis Solido,INFINOA, RA-4000 San Miguel De Tucuman, Tucuman, Argentina

[2] Univ Nacl Cuyo, Inst Balseiro, CNEA, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Argentina

[3] Consejo Nacl Invest Cient & Tecn, RA-8400 San Carlos De Bariloche, Argentina

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 09期

关键词：

SPONTANEOUS POLARIZATION; ELECTRICAL-PROPERTIES; OXIDE; SEMICONDUCTORS; INTERFACES; NANOWIRES; SURFACES;

D O I：

10.1063/1.5010942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoconductance spectroscopy has been studied in epitaxial ZnO thin films with different thicknesses that range between 136 and 21 nm. We report a systematic decrease in photoconductivity and a red shift in band edge photoconductance spectra when the thickness is reduced. For thinner films, it is found that the effective energy gap value diminishes. By time dependent photoconductivity measurements, we found an enhanced contribution of the slow relaxation times for thicker films. These effects are interpreted in terms of a band-bending contribution where the Franz-Keldysh effect and the polarization of ZnO play a major role in thinner films. Published by AIP Publishing.

引用

页数：5

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