Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene

被引:35
|
作者
Kim, Namdong [1 ,2 ,3 ]
Lee, Paengro [2 ]
Kim, Youngwook [2 ]
Kim, Jun Sung [2 ]
Kim, Yongsam [3 ,4 ]
Noh, Do Young [4 ]
Yu, Seong Uk [1 ]
Chung, Jinwook [2 ]
Kim, Kwang S. [1 ,2 ,5 ]
机构
[1] Pohang Univ Sci & Technol, Dept Chem, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[3] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea
[4] Gwangju Inst Sci & Technol, Dept Phys & Photon Sci, Kwangju 500712, South Korea
[5] Ulsan Natl Inst Sci & Technol, Dept Chem, Ulsan 689798, South Korea
关键词
topological insulator (TI); surface states; Bi2Se3 thin film; graphene; interface; SINGLE DIRAC CONE; INSULATOR; TRANSPORT;
D O I
10.1021/nn405503k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de Haas (SdH) oscillation associated with a topological surface state could be observed at the interface of a metallic Bi2Se3 film with a carrier density higher than similar to 10(19) cm(-3). Our in situ X-ray diffraction study shows that the Bi2Se3 film grows epitaxially in a quintuple layer-by-layer fashion from the bottom layer without any structural distortion by interfacial strain. The magnetotransport measurements including SdH oscillations stemming from multiple conductance channels reveal that the topological surface state, with the mobility as high as similar to 0.5 m(2)/(V s), remains intact from the graphene underneath without degradation. Given that the graphene was prepatterned on arbitrary insulating substrates, the TI-based microelectronic design could be exploited. Our study thus provides a step forward to observe the topological surface states at the interface without degradation by tuning the interface between TI and graphene into a measurable current for device application.
引用
收藏
页码:1154 / 1160
页数:7
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