Field effect transistor as detector of THz radiation helicity

被引：0

作者：

Romanov, K. S. ^{[1
]}

Dyakonova, N. ^{[1
]}

But, D. B. ^{[1
]}

Teppe, F. ^{[1
]}

Knap, W. ^{[1
]}

Dyakonov, M. I. ^{[1
]}

Drexler, C. ^{[2
]}

Olbrich, P. ^{[2
]}

Karch, J. ^{[2
]}

Schafberger, M. ^{[2
]}

Ganichev, S. ^{[2
]}

Mityagin, Yu ^{[3
]}

Klimenko, O. ^{[3
]}

机构：

[1] Univ Montpellier 2, CNRS, Lab Charles Coulomb, Montpellier, France

[2] Univ Regensburg, Terahertz Ctr, Regensburg, Germany

[3] Lebedev Phys Inst, Moscow, Russia

来源：

TERAHERTZ EMITTERS, RECEIVERS, AND APPLICATIONS IV | 2013年 / 8846卷

关键词：

D O I：

10.1117/12.2022264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We use two antenna model to develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect is due to the mixing of the ac signals produced in the channel by the two antennas. We obtain the helicity-dependent part of the photoresponse and its dependence on the antenna impedance, gate length, and gate voltage.

引用

页数：9

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