Influence of the shallow impurity environment on the luminescence of single-quantum dots

被引:8
|
作者
Hartmann, A [1 ]
Ducommun, Y [1 ]
Bächthold, M [1 ]
Kapon, E [1 ]
机构
[1] Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland
来源
PHYSICA E | 2000年 / 7卷 / 3-4期
关键词
semiconductor; single-quantum dot; photoluminescence;
D O I
10.1016/S1386-9477(99)00372-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The evolution of low-temperature photoluminescence (PL) spectra of single GaAs/AlGaAs quantum dots (QD) is studied as a function of laser excitation power. At very low powers, where multi-exciton occupation of the QD can be excluded, an unexpected and pronounced spectral evolution is observed. In this weak excitation regime, a significant difference in the fine structure of single-QD spectra is observed not only among different, structurally identical QDs of the same sample, but also among spectra taken from the same single QD excited above and below the AlGaAs barrier. A time-resolved, two-color pump and probe PL experiment on a single QD indicates relaxation times between the different spectral shapes in the ms-range. A model, taking into account the influence of the shallow impurities in the environment of each QD, explains the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:461 / 465
页数:5
相关论文
共 50 条
  • [31] Photostimulated luminescence of quantum dots
    Masumoto, Y
    Ogasawara, S
    JOURNAL OF LUMINESCENCE, 2000, 87-9 (87) : 360 - 362
  • [32] The influence of compressive stress on shallow-donor impurity states in symmetric GaAs-Ga1-xAlxAs double quantum dots
    Liu, Jian-Jun
    Shen, Man
    Wang, Shao-Wei
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
  • [33] Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots
    Labeau, Olivier
    Tamarat, Philippe
    Lounis, Brahim
    Physical Review Letters, 2003, 90 (25 I) : 257404 - 257404
  • [34] Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots
    Labeau, O
    Tamarat, P
    Lounis, B
    PHYSICAL REVIEW LETTERS, 2003, 90 (25)
  • [35] Two types of luminescence blinking revealed by spectroelectrochemistry of single quantum dots
    Galland, Christophe
    Ghosh, Yagnaseni
    Steinbrueck, Andrea
    Sykora, Milan
    Hollingsworth, Jennifer A.
    Klimov, Victor I.
    Htoon, Han
    NATURE, 2011, 479 (7372) : 203 - U75
  • [36] Two types of luminescence blinking revealed by spectroelectrochemistry of single quantum dots
    Christophe Galland
    Yagnaseni Ghosh
    Andrea Steinbrück
    Milan Sykora
    Jennifer A. Hollingsworth
    Victor I. Klimov
    Han Htoon
    Nature, 2011, 479 : 203 - 207
  • [37] Luminescence mechanism in hydrogenated silicon quantum dots with a single oxygen ligand
    Shen, Hong
    Yu, Zhiyuan
    Wang, Jinjin
    Lu, Ming
    Qiao, Chong
    Su, Wan-Sheng
    Zheng, Yuxiang
    Zhang, Rongjun
    Jia, Yu
    Chen, Liangyao
    Wang, Caizhuang
    Ho, Kaiming
    Wang, Songyou
    NANOSCALE ADVANCES, 2021, 3 (08): : 2245 - 2251
  • [38] Level stability of the quantum dots with impurity
    Huang, YS
    Liaw, SS
    MODERN PHYSICS LETTERS B, 1999, 13 (27): : 977 - 981
  • [39] Substitutional impurity in the graphene quantum dots
    Sieranski, K.
    Szatkowski, J.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2015, 73 : 40 - 44
  • [40] Impurity absorption in spherical quantum dots
    Menendez, E
    TralleroGiner, C
    Casado, E
    SURFACES, VACUUM, AND THEIR APPLICATIONS, 1996, (378): : 129 - 132